au.\*:("KOESTER, Steven J")
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On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel TransistorsKOSWATTA, Siyuranga O; KOESTER, Steven J; HAENSCH, Wilfried et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 12, pp 3222-3230, issn 0018-9383, 9 p.Article
Effects of Substrate Orientation and Channel Stress on Short-Channel Thin SOI MOSFETsMAJUMDAR, Amian; OUYANG, Christine; KOESTER, Steven J et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 9, pp 2067-2072, issn 0018-9383, 6 p.Article
Undoped-Body Extremely Thin SOI MOSFETs With Back GatesMAJUMDAR, Amlan; ZHIBIN REN; KOESTER, Steven J et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 10, pp 2270-2276, issn 0018-9383, 7 p.Article
Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2LUCOVSKY, Gerald.Solid-state electronics. 2013, Vol 83, pp 30-36, issn 0038-1101, 7 p.Conference Paper
Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layersMORIYAMA, Yoshihiko; IKEDA, Keiji; KAMIMUTA, Yuuichi et al.Solid-state electronics. 2013, Vol 83, pp 42-45, issn 0038-1101, 4 p.Conference Paper
n―Si―p-Si1―xGex nanowire arrays for thermoelectric power generationBIN XU; CHUANBO LI; MYRONOV, Maksym et al.Solid-state electronics. 2013, Vol 83, pp 107-112, issn 0038-1101, 6 p.Conference Paper
Low-Power Circuit Analysis and Design Based on Heterojunction Tunneling Transistors (HETTs)YOONMYUNG LEE; DAEYEON KIM; JIN CAI et al.IEEE transactions on very large scale integration (VLSI) systems. 2013, Vol 21, Num 9, pp 1632-1643, issn 1063-8210, 12 p.Article
Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman methodUSUDA, Koji; TEZUKA, Tsutomu; KOSEMURA, Daisuke et al.Solid-state electronics. 2013, Vol 83, pp 46-49, issn 0038-1101, 4 p.Conference Paper
Development of epitaxial growth technology for Ge1―xSnx alloy and study of its properties for Ge nanoelectronicsNAKATSUKA, Osamu; SHIMURA, Yosuke; TAKEUCHI, Wakana et al.Solid-state electronics. 2013, Vol 83, pp 82-86, issn 0038-1101, 5 p.Conference Paper
Phosphorus atomic layer doping in Ge using RPCVDYAMAMOTO, Yuji; KURPS, Rainer; MAI, Christian et al.Solid-state electronics. 2013, Vol 83, pp 25-29, issn 0038-1101, 5 p.Conference Paper
The SiGeSn approach towards Si-based lasersSUN, G; YU, S.-Q.Solid-state electronics. 2013, Vol 83, pp 76-81, issn 0038-1101, 6 p.Conference Paper
Charge carrier traffic at self-assembled Ge quantum dots on SiKANIEWSKA, M; ENGSTRÖM, O; KARMOUS, A et al.Solid-state electronics. 2013, Vol 83, pp 99-106, issn 0038-1101, 8 p.Conference Paper
Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structureKATO, Kimihiko; SAKASHITA, Mitsuo; TAKEUCHI, Wakana et al.Solid-state electronics. 2013, Vol 83, pp 56-60, issn 0038-1101, 5 p.Conference Paper
Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drainsHARTMANN, J. M; BENEVENT, V; DUTARTRE, D et al.Solid-state electronics. 2013, Vol 83, pp 10-17, issn 0038-1101, 8 p.Conference Paper
Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallizationYINJIE DING; RAN CHENG; QIAN ZHOU et al.Solid-state electronics. 2013, Vol 83, pp 37-41, issn 0038-1101, 5 p.Conference Paper
Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETsBEDELL, Stephen W; MAJUMDAR, Amlan; OTT, John A et al.IEEE electron device letters. 2008, Vol 29, Num 7, pp 808-810, issn 0741-3106, 3 p.Article
Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)KOESTER, Steven J; KING LIU, Tsu-Jae; HARTMANN, Jean-Michel et al.Solid-state electronics. 2013, Vol 83, issn 0038-1101, 120 p.Conference Proceedings
Epitaxial growth and anisotropic strain relaxation of Ge1―xSnx layers on Ge(110) substratesASANO, Takanori; SHIMURA, Yosuke; TAOKA, Noriyuki et al.Solid-state electronics. 2013, Vol 83, pp 71-75, issn 0038-1101, 5 p.Conference Paper
Low temperature RPCVD epitaxial growth of Si1―xGex using Si2H6 and Ge2H6WIRTHS, S; BUCA, D; TIEDEMANN, A. T et al.Solid-state electronics. 2013, Vol 83, pp 2-9, issn 0038-1101, 8 p.Conference Paper
Gate Length and Performance Scaling of Undoped-Body Extremely Thin SOI MOSFETsMAJUMDAR, Amlan; XINLIN WANG; KUMAR, Arvind et al.IEEE electron device letters. 2009, Vol 30, Num 4, pp 413-415, issn 0741-3106, 3 p.Article
Low-frequency noise in buried-channel SiGe n-MODFETsMADAN, Anuj; CRESSLER, John D; KOESTER, Steven J et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 901-904, issn 0038-1101, 4 p.Conference Paper
High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect TransistorsMAJUMDAR, Amlan; ZHIBIN REN; SLEIGHT, Jeffrey W et al.IEEE electron device letters. 2008, Vol 29, Num 5, pp 515-517, issn 0741-3106, 3 p.Article
Ge-on-SOI-detector/Si-CMOS-amplifier receivers for high-performance optical-communication applicationsKOESTER, Steven J; SCHOW, Clint L; SCHARES, Laurent et al.Journal of lightwave technology. 2007, Vol 25, Num 1, pp 46-57, issn 0733-8724, 12 p.Conference Paper
High-speed, low-voltage optical receivers consisting of Ge-on-SOI photodiodes paired with CMOS ICsSCHOW, Clint L; KOESTER, Steven J; SCHARES, Laurent et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 647705.1-647705.13, issn 0277-786X, isbn 978-0-8194-6590-0, 1VolConference Paper
High speed, lateral PIN photodiodes in silicon technologiesSCHAUB, Jeremy D; KOESTER, Steven J; DEHLINGER, Gabriel et al.SPIE proceedings series. 2004, pp 1-11, isbn 0-8194-5261-0, 11 p.Conference Paper
